View 2SC5509_427579.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
* Ideal for medium output power amplification * NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz * Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz * fT = 25 GHz technology adopted * Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number 2SC5509 2SC5509-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form * 8 mm wide embossed taping * Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot
Note
Ratings 15 3.3 1.5 100 190 150 -65 to +150
Unit V V V mA mW C C
Tj Tstg
Note Free Air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information.
Document No. PU10009EJ01V0DS (1st edition) Date Published October 2001 CP(K) Printed in Japan
(c) NEC Compound Semiconductor Devices 2001
2SC5509
THERMAL RESISTANCE
Parameter Junction to Case Resistance Junction to Ambient Resistance Symbol Rth j-c Rth j-a Ratings 95 650 Unit C/W C/W
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Maximum Available Power Gain Maximum Stable Power Gain Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point fT S21e NF Cre
Note 2 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
ICBO IEBO hFE
Note 1
VCB = 5 V, IE = 0 mA VBE = 1 V, IC = 0 mA VCE = 2 V, IC = 10 mA
- - 50
- - 70
600 600 100
nA nA -
VCE = 3 V, IC = 90 mA, f = 2 GHz VCE = 2 V, IC = 50 mA, f = 2 GHz VCE = 2 , IC = 10 mA, f = 2 Hz, ZS = Zopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 2 V, IC = 50 mA, f = 2 GHz VCE = 2 V, IC = 50 mA, f = 2 GHz VCE = 2 V, IC = 70 mA VCE = 2 V, IC = 70 mA
Note 5
13 8 - - - - - -
15 11 1.2 0.5 14 15 17 27
- - 1.7 0.75 - - - -
GHz dB dB pF dB dB dBm dBm
MAG MSG
Note 3
Note 4
PO (1 dB) OIP3
, f = 2 GHz , f = 2 GHz
Note 5
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = 4. MSG = S21 (K - (K2 - 1) ) S12 S21 S12
5. Collector current when PO (1 dB) is output
hFE CLASSIFICATION
Rank Marking hFE Value FB T80 50 to 100
2
Data Sheet PU10009EJ01V0DS
2SC5509
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C)
Thermal/DC Characteristics
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE, CASE TEMPERATURE
400
Total Power Dissipation Ptot (mW)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
50 VCE = 2 V
Collector Current IC (mA)
350
330
When case temperature is specified
300
Mounted on
40
250 ceramic substrate 200
190
(15 x 15 mm, t = 0.6 mm)
30
150
Free Air
20
100 50 0 25 50 75 100 125 150
10
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient Temperature TA (C), Case Temperature TC (C)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
150 200
DC CURRENT GAIN vs. COLLECTOR CURRENT
VCE = 2 V
Collector Current IC (mA)
100
50
0 A IB = 1 10 A 1 000 900 A 800 A 700 A 600 A 500 A 400 A 300 A 200 A 100 A
DC Current Gain hFE
150
100
50
0
1
2
3
4
5
0 0.001
0.01
0.1
1
10
100
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Capacitance/fT Characteristics
REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance Cre (pF)
1.00 f = 1 MHz 0.80 30
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
Gain Bandwidth Product fT (GHz)
VCE = 3 V f = 2 GHz
25 20 15 10 5 0 1
0.60
0.40
0.20
0
1.0
2.0
3.0
4.0
5.0
10
100
1 000
Collector to Base Voltage VCB (V)
Data Sheet PU10009EJ01V0DS
Collector Current IC (mA)
3
2SC5509
Gain Characteristics
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
40 35 30 25 20 15 10 5 0 0.1 1.0 Frequency f (GHz) |S21e|2 MSG MAG
VCE = 2 V IC = 50 mA
10.0
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
30 25 20 15 10 5 0 |S21e|
2
30 25 20 MSG 15 10 5 0 MAG VCE = 2 V f = 2 GHz
VCE = 2 V f = 1 GHz MSG MAG
|S21e|2
1
10 Collector Current IC (mA)
100
1
10 Collector Current IC (mA)
100
Output Characteristics
OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER
25 20 15 10 5 0 -5 -15 IC VCE = 2 V f = 1 GHz 150 Pout 125 100 75 50 25 0 15 25 20 15 10 5 0 -5 -15
OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER
VCE = 2 V f = 2 GHz Pout 100 75 50 IC 25 0 15 150 125
Collector Current IC (mA)
-10
-5
0
5
10
-10
-5
0
5
10
Input Power Pin (dBm)
Input Power Pin (dBm)
4
Data Sheet PU10009EJ01V0DS
Collector Current IC (mA)
Output Power Pout (dBm)
Output Power Pout (dBm)
2SC5509
Noise Characteristics
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
6.0 5.0
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
30 6.0 5.0
Noise Figure NF (dB)
30 VCE = 2 V f = 1.5 GHz 25 20 Ga 15 10 5 NF 0 100
VCE = 2 V f = 1 GHz
Associated Gain Ga (dB)
4.0 3.0 2.0 1.0
Ga
20 15 10 5
4.0 3.0 2.0 1.0 0.0
NF 0.0 1 10 Collector Current IC (mA) 0 100 1 10
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
6.0 5.0
Noise Figure NF (dB)
NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT
30 6.0 5.0
Noise Figure NF (dB)
30 VCE = 2 V f = 2.5 GHz 25 20 15 Ga 10 NF 5 0 100
VCE = 2 V f = 2 GHz
Associated Gain Ga (dB)
4.0 3.0 2.0 1.0 0.0 Ga
20 15 10 5 0 100
4.0 3.0 2.0 1.0 0.0
NF 1 10 Collector Current IC (mA)
1
10 Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10009EJ01V0DS
5
Associated Gain Ga (dB)
25
Associated Gain Ga (dB)
25
2SC5509
S-PARAMETERS
VCE = 2 V, IC = 5 mA
Frequency (GHz) MAG. S11 ANG. (deg.) -28.2 -53.3 -74.8 -92.9 -108.1 -121.0 -132.0 -141.6 -149.9 -157.3 -164.0 -170.0 -175.5 179.5 174.7 170.4 166.2 162.4 158.8 155.2 152.2 148.9 146.0 143.3 140.4 137.9 135.3 133.7 132.1 130.0 121.2 MAG. S21 ANG. (deg.) 161.9 147.0 134.8 124.5 116.0 108.6 102.3 96.6 91.5 86.9 82.6 78.6 74.9 71.3 67.9 64.6 61.4 58.4 55.5 52.6 49.8 47.1 44.4 41.8 39.2 36.7 34.4 33.0 31.3 29.1 16.5 MAG. S12 ANG. (deg.) 72.3 60.2 50.9 42.8 36.7 31.7 27.8 24.7 21.8 19.7 17.7 16.0 14.6 13.4 12.3 11.3 10.4 9.6 8.9 8.4 7.7 7.0 6.5 6.0 5.5 4.8 4.9 7.1 8.4 8.0 9.0 MAG. S22 ANG. (deg.) -19.5 -35.9 -49.6 -61.4 -71.5 -80.4 -88.6 -96.2 -103.3 -110.1 -116.6 -123.0 -129.1 -134.9 -140.6 -146.1 -151.4 -156.5 -161.2 -165.8 -170.2 -174.2 -178.1 178.2 174.6 170.4 165.9 162.7 162.4 161.5 149.8
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0
0.79 0.75 0.73 0.71 0.69 0.68 0.67 0.67 0.67 0.67 0.67 0.67 0.67 0.67 0.68 0.68 0.69 0.69 0.69 0.70 0.71 0.71 0.72 0.72 0.72 0.73 0.72 0.73 0.73 0.74 0.80
14.75 13.32 11.81 10.40 9.18 8.15 7.28 6.55 5.94 5.42 4.97 4.59 4.25 3.96 3.70 3.47 3.26 3.07 2.90 2.74 2.60 2.47 2.35 2.24 2.14 2.03 1.93 1.84 1.79 1.73 1.27
0.03 0.05 0.07 0.08 0.09 0.09 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12
0.93 0.84 0.74 0.65 0.58 0.51 0.46 0.42 0.38 0.35 0.33 0.31 0.30 0.29 0.28 0.27 0.27 0.27 0.27 0.27 0.27 0.27 0.28 0.28 0.29 0.29 0.30 0.29 0.28 0.29 0.38
6
Data Sheet PU10009EJ01V0DS
2SC5509
VCE = 2 V, IC = 10 mA
Frequency (GHz) MAG. S11 ANG. (deg.) -42.0 -75.4 -100.3 -118.7 -132.8 -144.0 -153.1 -160.9 -167.5 -173.5 -178.7 176.5 172.1 168.0 164.2 160.7 157.2 154.0 151.0 148.0 145.4 142.6 140.1 137.7 135.1 132.9 130.5 129.0 127.8 126.0 118.7 107.5 MAG. S21 ANG. (deg.) 156.3 138.3 125.1 115.1 107.2 100.7 95.1 90.3 86.0 82.0 78.4 75.0 71.7 68.6 65.6 62.8 60.0 57.3 54.7 52.1 49.7 47.3 44.9 42.5 40.2 37.9 35.8 34.6 33.1 31.1 19.9 5.8 MAG. S12 ANG. (deg.) 67.9 53.8 45.8 39.3 35.3 32.5 30.7 29.3 28.2 27.5 26.8 26.5 25.9 25.6 25.3 24.8 24.3 23.9 23.4 23.1 22.7 21.9 21.4 20.9 20.2 19.6 19.7 21.2 21.6 20.6 17.6 13.1 MAG. S22 ANG. (deg.) -29.3 -52.4 -70.5 -85.4 -97.8 -108.7 -118.3 -127.1 -135.0 -142.2 -148.8 -154.9 -160.6 -165.8 -170.6 -175.0 -179.2 176.9 173.3 169.8 166.7 163.7 160.8 158.0 155.2 152.2 148.9 145.9 145.0 144.3 136.2 125.3
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0
0.65 0.63 0.63 0.62 0.62 0.63 0.63 0.63 0.64 0.64 0.65 0.65 0.65 0.66 0.67 0.67 0.68 0.68 0.69 0.69 0.70 0.70 0.71 0.71 0.72 0.72 0.72 0.72 0.73 0.74 0.80 0.83
23.47 19.87 16.55 13.88 11.82 10.22 8.97 7.96 7.15 6.47 5.89 5.41 4.99 4.63 4.32 4.04 3.79 3.56 3.36 3.17 3.01 2.86 2.71 2.58 2.46 2.34 2.22 2.11 2.05 1.99 1.45 1.09
0.03 0.04 0.05 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.10 0.10 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.12 0.13 0.14
0.88 0.75 0.63 0.54 0.48 0.43 0.40 0.37 0.36 0.34 0.34 0.33 0.33 0.33 0.33 0.33 0.33 0.34 0.34 0.35 0.35 0.36 0.37 0.37 0.38 0.39 0.39 0.39 0.38 0.39 0.47 0.53
Data Sheet PU10009EJ01V0DS
7
2SC5509
VCE = 2 V, IC = 20 mA
Frequency (GHz) MAG. S11 ANG. (deg.) -63.8 -103.8 -127.4 -142.7 -153.8 -162.3 -169.2 -175.1 179.8 175.2 171.1 167.2 163.7 160.3 157.1 154.1 151.2 148.5 145.8 143.2 140.9 138.4 136.2 134.0 131.6 129.6 127.3 125.8 124.9 123.4 116.8 106.4 MAG. S21 ANG. (deg.) 149.5 129.5 116.5 107.3 100.5 94.9 90.1 86.0 82.2 78.8 75.6 72.5 69.6 66.9 64.1 61.6 59.0 56.5 54.2 51.8 49.5 47.3 45.1 42.9 40.7 38.6 36.6 35.5 34.4 32.4 22.1 8.9 MAG. S12 ANG. (deg.) 64.8 50.4 44.2 41.0 39.5 39.0 38.8 38.9 38.8 38.8 38.7 38.6 38.3 38.0 37.5 37.0 36.3 35.7 35.0 34.3 33.5 32.5 31.7 30.8 29.8 28.9 28.6 29.6 29.9 28.1 23.2 15.7 MAG. S22 ANG. (deg.) -41.4 -71.4 -93.1 -109.7 -122.8 -133.6 -142.6 -150.4 -157.1 -163.0 -168.3 -173.1 -177.5 178.5 174.8 171.4 168.2 165.1 162.2 159.5 156.9 154.4 152.0 149.6 147.3 144.8 142.0 139.1 138.1 137.6 130.3 119.8
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0
0.50 0.54 0.57 0.59 0.60 0.61 0.61 0.62 0.63 0.63 0.64 0.64 0.65 0.66 0.66 0.67 0.67 0.68 0.68 0.69 0.70 0.70 0.71 0.71 0.72 0.72 0.72 0.72 0.72 0.74 0.80 0.83
33.35 25.91 20.30 16.37 13.60 11.58 10.05 8.86 7.91 7.12 6.47 5.93 5.46 5.06 4.70 4.40 4.12 3.87 3.65 3.44 3.26 3.10 2.94 2.80 2.66 2.53 2.41 2.28 2.22 2.16 1.54 1.16
0.02 0.03 0.04 0.04 0.05 0.05 0.05 0.06 0.06 0.06 0.07 0.07 0.07 0.08 0.08 0.08 0.09 0.09 0.09 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.13 0.14
0.81 0.65 0.55 0.48 0.44 0.42 0.40 0.39 0.39 0.38 0.38 0.38 0.39 0.39 0.40 0.40 0.41 0.41 0.42 0.42 0.43 0.44 0.45 0.45 0.46 0.47 0.48 0.47 0.46 0.47 0.55 0.60
8
Data Sheet PU10009EJ01V0DS
2SC5509
VCE = 2 V, IC = 50 mA
Frequency (GHz) MAG. S11 ANG. (deg.) -99.2 -133.4 -150.6 -161.3 -169.1 -175.2 179.7 175.2 171.3 167.6 164.2 161.0 158.0 155.2 152.4 149.8 147.1 144.8 142.4 140.0 137.9 135.6 133.5 131.5 129.3 127.4 125.1 123.4 122.9 121.6 115.4 105.2 MAG. S21 ANG. (deg.) 143.0 122.2 110.1 102.0 96.0 91.0 86.9 83.2 79.8 76.7 73.7 70.9 68.2 65.6 63.1 60.7 58.3 55.9 53.7 51.5 49.3 47.2 45.1 43.0 40.9 38.9 36.9 35.8 35.1 33.2 23.2 10.8 MAG. S12 ANG. (deg.) 59.2 50.6 48.2 47.8 48.3 48.7 49.1 49.6 49.7 49.5 49.0 48.7 48.0 47.2 46.5 45.5 44.4 43.5 42.3 41.3 40.1 38.9 37.8 36.6 35.4 34.4 33.6 34.3 34.4 32.2 25.7 17.6 MAG. S22 ANG. (deg.) -55.1 -90.5 -113.6 -129.7 -141.6 -150.8 -158.3 -164.6 -169.9 -174.7 -178.9 177.3 173.8 170.5 167.4 164.5 161.8 159.1 156.7 154.2 152.0 149.8 147.6 145.5 143.4 141.1 138.6 135.7 134.7 134.4 126.9 126.5
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0
0.39 0.51 0.56 0.58 0.60 0.61 0.62 0.62 0.63 0.64 0.64 0.65 0.65 0.66 0.67 0.67 0.68 0.68 0.69 0.70 0.70 0.71 0.71 0.72 0.72 0.73 0.73 0.72 0.72 0.74 0.81 0.84
41.74 29.88 22.35 17.59 14.41 12.16 10.50 9.22 8.20 7.38 6.70 6.12 5.63 5.21 4.84 4.52 4.23 3.98 3.75 3.54 3.35 3.18 3.02 2.87 2.73 2.60 2.47 2.33 2.26 2.21 1.52 1.14
0.02 0.03 0.03 0.03 0.04 0.04 0.05 0.05 0.05 0.06 0.06 0.07 0.07 0.07 0.08 0.08 0.09 0.09 0.09 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.13 0.14 0.15
0.71 0.57 0.50 0.46 0.44 0.43 0.43 0.43 0.43 0.43 0.43 0.44 0.44 0.45 0.45 0.46 0.46 0.47 0.48 0.48 0.49 0.50 0.51 0.51 0.52 0.53 0.53 0.53 0.52 0.53 0.62 0.66
Data Sheet PU10009EJ01V0DS
9
2SC5509
EQUAL NF CIRCLE
VCE = 2 V IC = 10 mA f = 1 GHz
Unstable Area
NFmin = 0.95 dB opt
1.5 dB
2.0 dB 2.5 dB 3.0 dB
3.5 dB
4.0 dB
VCE = 2 V IC = 10 mA f = 2 GHz
NFmin = 1.1 dB opt
1.5 dB
B 2.0 d dB 2.5 .0 dB dB B 3 3.5 .0 d
4
10
Data Sheet PU10009EJ01V0DS
2SC5509
NOISE PARAMETERS
VCE = 2 V, IC = 5 mA
f (GHz) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 NFmin (dB) 0.70 0.74 0.78 0.98 1.10 1.14 1.18 1.39 Ga (dB) 18.0 17.0 16.2 13.6 12.5 12.2 11.8 9.9 MAG. 0.17 0.18 0.20 0.32 0.40 0.43 0.46 0.56 opt ANG. 93.0 103.0 112.7 155.4 176.2 -177.8 -172.2 -151.8 0.11 0.11 0.11 0.09 0.07 0.06 0.06 0.08 Rn/50
VCE = 2 V, IC = 20 mA
f (GHz) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 NFmin (dB) 1.12 1.15 1.18 1.31 1.38 1.41 1.43 1.56 Ga (dB) 20.7 19.7 18.8 15.7 14.4 14.0 13.6 11.5 MAG. 0.30 0.31 0.32 0.39 0.45 0.47 0.49 0.56 opt ANG. -164.8 -162.7 -160.7 -151.5 -146.3 -144.6 -142.9 -133.5 0.08 0.09 0.09 0.10 0.10 0.10 0.11 0.14 Rn/50
VCE = 2 V, IC = 10 mA
f (GHz) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 NFmin (dB) 0.87 0.90 0.93 1.07 1.15 1.18 1.20 1.35 Ga (dB) 19.6 18.6 17.8 14.8 13.6 13.2 12.8 10.9 MAG. 0.13 0.15 0.17 0.30 0.39 0.41 0.44 0.53 opt ANG. 170.3 171.5 173.0 -174.1 -164.1 -160.6 -157.2 -142.3 0.09 0.09 0.09 0.08 0.07 0.07 0.07 0.10 Rn/50
VCE = 2 V, IC = 50 mA
f (GHz) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 NFmin (dB) 1.75 1.78 1.80 1.92 2.00 2.02 2.04 2.17 Ga (dB) 21.3 20.3 19.4 16.2 14.8 14.4 13.9 11.8 MAG. 0.49 0.49 0.50 0.55 0.59 0.60 0.61 0.65 opt ANG. -159.4 -157.2 -154.9 -144.7 -139.1 -137.3 -135.5 -126.4 0.10 0.10 0.11 0.14 0.17 0.19 0.20 0.28 Rn/50
Data Sheet PU10009EJ01V0DS
11
2SC5509
PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (UNIT: mm)
0.40+0.1 -0.05
2.05 0.1
0.30+0.1 -0.05 0.65 4 0.30
+0.1 -0.05
1.25 0.1
2
2.0 0.1
0.60
3
T80
1.25
0.65
0.59 0.05
0.30+0.1 -0.05
1
PIN CONNECTIONS
1. 2. 3. 4. Emitter Collector Emitter Base
12
Data Sheet PU10009EJ01V0DS
0.11+0.1 -0.05
0.65
1.30
2SC5509
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235C or below, Time: 30 seconds or less (at 210C or higher), Note Count: 2 times or less, Exposure limit: None Package peak temperature: 215C or below, Time: 40 seconds or less (at 200C or higher), Note Count: 2 times or less, Exposure limit: None Soldering bath temperature: 260C or below, Time: 10 seconds or less, Note Count: 1 time, Exposure limit: None Recommended Condition Symbol IR30-00-2
For soldering
VPS
VP15-00-2
Wave Soldering
WS60-00-1
Note After opening the dry pack, store it at 25C or less and 65% RH or less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For the details the recommended soldering conditions, refer to the document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E: published by NEC Corporation).
Data Sheet PU10009EJ01V0DS
13
2SC5509
* The information in this document is current as of October, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4 - 0110
14
Data Sheet PU10009EJ01V0DS
2SC5509
Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electron Devices European Operations http://www.nec.de/ TEL: +49-211-6503-101 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918
0110

▲Up To Search▲

Price & Availability of 2SC5509

	To Download 2SC5509 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .